Plasma Enhanced Chemical Vapor Deposition (PECVD) of pure phase thin films of Ti or TiC using an environmentally safer non-halogen metal-organic precursors such as titanium isopropoxide (TIP) is challenging due to its CH3 and O radical content. To address this challenge, Advanced Cooling Technologies, Inc. (ACT), in collaboration with the Princeton Collaborative Research Facility (PCRF), proposes to (i) develop a novel laser diagnostic method to measure plasma generated CH3 radicals over a substrate surface; (ii) use the spatially and time resolved measurements of CH3, O and H atom to understand plasma-surface interactions during PECVD thin film deposition of pure phase Ti and TiC using metal-organic precursors. The methyl (CH3) radical plays a central role in metal-organic based PECVD of metallic films but is challenging to detect due to its high reactivity and strongly pre-dissociative electronically excited states. The proposed detection technique for CH3 will use a simpler method of laser dissociation followed by measurement of fragment density by Laser Induced Fluorescence (LIF). The cross sections for laser dissociation of CH3 will be quantified (with and without plasma) to enable quantification of number densities in plasma. The proposed TALIF diagnostics will detail and correlate the relations between impurity concentrations with low temperature plasma (LTP) process parameters and film properties and thereby provide means to optimize Ti film growth using TIP with minimal impurities. To conduct the research effort, ACT will design and build an LTP reactor capable of performing Ti film deposition via PECVD. Femtosecond (fs) LIF measurements will demonstrate the generation, diffusion, and surface chemistry of CH3 radicals based on the specified PECVD process parameters. The coated films will be analyzed by standard methods (SEM imaging, XRD etc.) to connect LTP process parameters and LIF results with film characteristics.