Public Abstract

DE-SC0025647: Advancing High Voltage Wide Bandgap Power Module Packaging forTransportation Electrification

Award Status: Active

Institution: University of Arkansas, Fayetteville, AR
UEI: MECEHTM8DB17
DUNS: 191429745

Most Recent Award Date: 09/27/2024
Number of Support Periods: 1
PM: Fitzsimmons, Timothy

Current Budget Period: 09/01/2024 - 08/31/2025
Current Project Period: 09/01/2024 - 08/31/2028
PI: Song, Xiaoqing

Supplement Budget Period: N/A

Public Abstract

The main goal of the project is to advance high voltage wide bandgap (WBG) power module packaging, by addressing challenges related to voltage insulation, electromagnetic interference (EMI), parasitic inductance and cooling. The project goal will be achieved through collaboration with Oak Ridge National Laboratory (ORNL), introducing a series of disruptive innovations that will be showcased through the development of a high voltage (> 10 kV) half bridge SiC MOSFET power module. The targeted specifications for this power module include >25 kV Partial Discharge Inception Voltage (PDIV), <5 nH parasitic power loop inductance, <20 nF coupling capacitance, >250 V/ns switching dv/dt, and 50 A/ns di/dt. The research aligns with the technology roadmap of the Vehicle Technologies Office (VTO) within the Department of Energy's Office of Energy Efficiency and Renewable Energy. If successful, the project will eliminate barriers in high voltage power module packaging, facilitating their application in electric vehicle (EV) fast charging stations and enhancing charging infrastructure efficiency, power density, and reliability. To achieve the project objectives, Four innovative methods will be employed: 1) Stacked power module substrate structure with an innovative patterned middle layer to enhance high voltage insulation and simultaneously mitigate EMI, 2) Novel packaging materials to enhance the substrate insulation capability and shield radiated EMI; 3) Holistic multi-objective optimization methodology for high voltage power module packaging, achieving co-optimization of thermal, voltage insulation, and fast-switching performance; 4) Development of specialized testbeds to validate voltage insulation, EMI mitigation, and high-speed switching performance of high voltage power modules. The project addresses knowledge gaps in high voltage power module packaging, introducing transformative designs capable of high voltage, high switching speed, and low EMI operation. Upon success, a >10 kV SiC MOSFET power module will be designed, packaged, and tested to showcase disruptive technologies developed. This achievement will eliminate technical barriers for the implementation of next-generation WBG and ultra-wide bandgap (UWBG) power devices in EV fast charging and other high voltage applications, advancing high-efficiency power converter development and supporting transportation electrification and Net Carbon Emission goals. The project will foster a long-term partnership with ORNL, catalyzing further research and development of high voltage semiconductor devices. Research outcomes and experiences will sustain the PI's future multi-disciplinary research activities, contributing to semiconductor devices, multiphysics analysis, power module packaging, and high-performance power electronics. Broader impacts include education and the development of the next generation STEM workforce, encouraging diversity in electrical engineering, especially in the areas of wide and ultra-wide bandgap semiconductor devices, power module packaging, and power electronics, with hands-on lab experiences.

The main goal of the project is to advance high voltage wide bandgap (WBG) power module packaging, by addressing challenges related to voltage insulation, electromagnetic interference (EMI), parasitic inductance and cooling. The project goal will be achieved through collaboration with Oak Ridge National Laboratory (ORNL), introducing a series of disruptive innovations that will be showcased through the development of a high voltage (> 10 kV) half bridge SiC MOSFET power module. The targeted specifications for this power module include >25 kV Partial Discharge Inception Voltage (PDIV), <5 nH parasitic power loop inductance, <20 nF coupling capacitance, >250 V/ns switching dv/dt, and 50 A/ns di/dt. The research aligns with the technology roadmap of the Vehicle Technologies Office (VTO) within the Department of Energy's Office of Energy Efficiency and Renewable Energy. If successful, the project will eliminate barriers in high voltage power module packaging, facilitating their application in electric vehicle (EV) fast charging stations and enhancing charging infrastructure efficiency, power density, and reliability.

To achieve the project objectives, Four innovative methods will be employed: 1) Stacked power module substrate structure with an innovative patterned middle layer to enhance high voltage insulation and simultaneously mitigate EMI, 2) Novel packaging materials to enhance the substrate insulation capability and shield radiated EMI; 3) Holistic multi-objective optimization methodology for high voltage power module packaging, achieving co-optimization of thermal, voltage insulation, and fast-switching performance; 4) Development of specialized testbeds to validate voltage insulation, EMI mitigation, and high-speed switching performance of high voltage power modules.

The project addresses knowledge gaps in high voltage power module packaging, introducing transformative designs capable of high voltage, high switching speed, and low EMI operation. Upon success, a >10 kV SiC MOSFET power module will be designed, packaged, and tested to showcase disruptive technologies developed. This achievement will eliminate technical barriers for the implementation of next-generation WBG and ultra-wide bandgap (UWBG) power devices in EV fast charging and other high voltage applications, advancing high-efficiency power converter development and supporting transportation electrification and Net Carbon Emission goals. The project will foster a long-term partnership with ORNL, catalyzing further research and development of high voltage semiconductor devices. Research outcomes and experiences will sustain the PI's future multi-disciplinary research activities, contributing to semiconductor devices, multiphysics analysis, power module packaging, and high-performance power electronics. Broader impacts include education and the development of the next generation STEM workforce, encouraging diversity in electrical engineering, especially in the areas of wide and ultra-wide bandgap semiconductor devices, power module packaging, and power electronics, with hands-on lab experiences.